
NTJS3157N
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
1400
1200
1000
V DS = 0 V
C iss
V GS = 0 V
T J = 25 ° C
5
4
V DS
Q G(TOT)
V GS
10
8
800
3
6
600
C rss
C iss
2
Q GS
Q GD
4
400
200
0
8
4
V GS
0
C rss
V DS
4
8
12
16
C oss
20
1
0
0
1
2 3 4 5 6
Q g , TOTAL GATE CHARGE (nC)
I D = 3.2 A
T J = 25 ° C
7
8
2
0
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
100
V DS = 10 V
I D = 0.5 A
V GS = 4.5 V
t d(off)
t f
t r
6
5
4
V GS = 0 V
T J = 25 ° C
10
1
t d(on)
3
2
1
0
1
10
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
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4